FABRICATION AND CHARACTERIZATION OF THIN-FILM SILICON SOLAR CELLS ON ALUMINA CERAMIC.WARABISAKO T; SAITOH T.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 446-449; BIBL. 5 REF.Article

OBSERVATION OF P-N JUNCTIONS WITH A FLYING-SPOT SCANNER USING A CHOPPED PHOTON BEAMMUNAKATA C; YAGI K; WARABISAKO T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 624-632; BIBL. 38 REF.Article

SILICON SOLAR CELLS FABRICATED BY A NEW ION IMPLANTATION CONCEPTITOH H; TOKIGUCHI K; WARABISAKO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; PP. 39-44; BIBL. 10 REF.Conference Paper

IMPURITY GETTERING OF POLYCRYSTALLINE SOLAR CELLS FABRICATED FROM REFINED METALLURGICAL-GRADE SILICONSAITOH T; WARABISAKO T; KURODA E et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 912-917; BIBL. 19 REF.Conference Paper

IMPURITY GETTERING OF DIFFUSED SOLAR CELLS FABRICATED FROM METALLURGICAL-GRADE SILICONSAITOH T; WARABISAKO T; KURODA E et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 7-11; BIBL. 12 REF.Conference Paper

IMPURITY GETTERING OF POLYCRYSTALLINE SOLAR CELLS FABRICATED FROM REFINED METALLURGICAL-GRADE SILICONSAITOH T; WARABISAKO T; KURODA E et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 671-677; BIBL. 19 REF.Article

SILICON SOLAR CELLS FABRICATED BY ION IMPLANTATION AND LASER ANNEALINGITOH H; TAMURA H; MIYAO M et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 55-60; BIBL. 8 REF.Conference Paper

Nondestructive measurement of minority carrier lifetimes in Si wafers using frequency dependence of ac photovoltagesHONMA, N; MUNAKATA, C; ITOH, H et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp 743-749, issn 0021-4922, 1Article

Optical measurement of carrier profiles in siliconMOTOOKA, T; WARABISAKO, T; TOKUYAMA, T et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 174-179, issn 0013-4651Article

CHARACTERIZATION OF 3-INCH SOLAR CELLS FABRICATED FROM GRANULAR SILICON OBTAINED IN A FLUIDIZED-BED REACTORWARABISAKO T; MATSUBARA S; ITOH H et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; PP. 23-27; BIBL. 5 REF.Conference Paper

Microwave-discharge plasma oxidation of silicon in a cusp magnetic fieldKIMURA, S; MURAKAMI, E; WARABISAKO, T et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 8, pp 2009-2012, issn 0013-4651Article

Lateral solid-phase epitaxial growth of phosphorus-ion implanted CVD polysiliconWARABISAKO, T; BERNARD, O; MONIWA, M et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 4, pp 1029-1030, issn 0013-4651Article

DENDRITIC GROWTH OF SILICON THIN FILMS ON ALUMINA CERAMIC AND THEIR APPLICATION TO SOLAR CELLS.SAITOH T; WARABISAKO T; ITOH H et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 413-416; BIBL. 8 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

FABRICATION AND CHARACTERIZATION OF SOLAR CELLS USING DENDRITIC SILICON THIN FILMS GROWN ON ALUMINA CERAMIC.MINAGAWA S; SAITOH T; WARABISAKO T et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 77-81; BIBL. 7 REF.Conference Paper

Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxyKUSUKAWA, K; MONIWA, M; MURAKAMI, E et al.Applied physics letters. 1988, Vol 52, Num 20, pp 1681-1683, issn 0003-6951Article

Design and characterization of flat-plate static-concentrator photovoltaic modulesUEMATSU, T; YAZAWA, Y; TSUTSUI, K et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 441-448, issn 0927-0248Conference Paper

Low-temperature fabrication of MOSFET's utilizing a microwave-excited plasma oxidation techniqueKIMURA, S.-I; MURAKAMI, E; WARABISAKO, T et al.IEEE electron device letters. 1986, Vol 7, Num 1, pp 38-40, issn 0741-3106Article

Development of bifacial PV cells for new applications of flat-plate modulesUEMATSU, T; TSUTSUI, K; YAZAWA, Y et al.Solar energy materials and solar cells. 2003, Vol 75, Num 3-4, pp 557-566, issn 0927-0248, 10 p.Conference Paper

AlGAAs solar cells growth by MBE for high-efficiency tandem cellsYAZAWA, Y; KITATANI, T; MINEMURA, J et al.Solar energy materials and solar cells. 1994, Vol 35, Num 1-4, pp 39-44, issn 0927-0248Conference Paper

Seed shape dependence of Si solid-phase epitaxy: preferential facet growthMURAKAMI, E; MONIWA, M; KUSUKAWA, K et al.Journal of applied physics. 1988, Vol 63, Num 10, pp 4975-4978, issn 0021-8979Article

Deposition mechanism of SiO₂ film by low-pressure microwave-discharged plasmaMURAKAMI, E; KIMURA, S.-I; MIYAKE, K et al.Journal of applied physics. 1987, Vol 62, Num 7, pp 3063-3066, issn 0021-8979Article

An ¹⁸O study of oxygen exchange phenomena during microwave-discharge plasma oxidation of siliconKIMURA, S; MURAKAMI, E; WARABISAKO, T et al.Journal of applied physics. 1988, Vol 63, Num 9, pp 4655-4660, issn 0021-8979Article

Effect of light degradation on bifacial Si solar cellsOHTSUKA, H; SAKAMOTO, M; KOYAMA, M et al.Solar energy materials and solar cells. 2001, Vol 66, Num 1-4, pp 51-59, issn 0927-0248Conference Paper

Photocurrent and photoluminescence in InGaAs/GaAs multiple quantum well solar cellsKITATANI, T; YAZAWA, Y; WATAHIKI, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 8, pp 4371-4372, issn 0021-4922, 1Article

Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxyMONIWA, M; KUSUKAWA, K; MURAKAMI, E et al.Applied physics letters. 1988, Vol 52, Num 21, pp 1788-1790, issn 0003-6951Article